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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUL381 DESCRIPTION *With TO-220C package *High voltage capability *Very high switching speed APPLICATIONS *Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak (tp<5 ms) Base current Base current-Peak (tp<5 ms) Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 800 400 9 5 8 2 4 70 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.78 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=100mA; L=25mH IE=10mA; IC=0 IC=1A ;IB=0.2A IC=2A ;IB=0.4A IC=3A ;IB=0.8A IC=1A ;IB=0.2A IC=2A ;IB=0.4A VCE=800V VBE=0 Tj=125 VCE=400V; IB=0 IC=2A ; VCE=5V IC=10mA ; VCE=5V 8 10 MIN 400 9 TYP. SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICES ICEO hFE-1 hFE-2 BUL381 MAX UNIT V 0.5 0.7 1.1 1.1 1.2 100 500 250 V V V V V A A Switching times resistive load ton ts tf Turn-on time Storage time Fall time VCC=250V ,IC=2A IB1=- IB2=0.4A tp=30s 1.4 1 2.2 0.8 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUL381 Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 |
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